Igbt GT40RR21
New IGBTThe GT40RR21 is also a 6th-generation IGBT intended for voltage-resonant inverter applications, for high-voltage circuit switching, with a built-in protection diode. Its outstanding characteristics place it at the very top among IGBT transistors intended for this purpose.
| Vces (collector-emitter voltage) | 1350 V |
| Ic (collector current) at 25°C | 40 A |
| Package | TO-3P(N) |
| Cies (input capacitance) | 1500 pF |
| Integrated diode | Da (RC-IGBT sa monolitski integrisanom dijaikom) |
