Igbt GT50J342
New IGBTThe GT50J34 is another in the line of new Toshiba transistors. This 6th-generation IGBT is intended for voltage-resonant inverter applications, with a built-in protection diode. Its outstanding characteristics place it at the very top among IGBT transistors intended for this purpose. The protection diode is integrated into the package. Junction temperature Tj = 175 degrees C (max). You can often find it in inverter welding machines, but it is also an excellent choice for all electronics hobby and professional projects.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 80 A |
| Package | TO-3P(N) |
| Cies (input capacitance) | 4800 pF |
| Integrated diode | Uključena između emitora i kolektora |
