Igbt GT50JR22
New IGBTThe GT50JR22 is a 6th-generation IGBT, distinguished by a high switching speed, manufactured exclusively for use in current-resonant inverter applications and partial-switching power factor correction applications, and is not recommended for other uses.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 50 A |
| Package | TO-3P(N) |
| Cies (input capacitance) | 2700 pF |
| Integrated diode | Da (Freewheeling Diode - FWD) |
