Igbt GT50N322A
New IGBTThis is another in the series of new Toshiba transistors. This 5th-generation IGBT is intended for voltage-resonant inverter applications, with a built-in protection diode. Its outstanding characteristics place it at the very top among IGBT transistors intended for this purpose. The protection diode is integrated into the package. Junction temperature Tj = 175 degrees C (max).
| Vces (collector-emitter voltage) | 1000 V |
| Ic (collector current) at 25°C | 50 A |
| Package | JEDEC 2-16C1C |
| Cies (input capacitance) | 4000 pF |
| Integrated diode | Da, FRD sa trr = 0.8 µs |
