Igbt GT15J321
New IGBTThis 4th-generation IGBT is distinguished by a high switching speed and a low saturation voltage. It is built with a protection diode, and is recommended as a reliable component in all applications requiring this transistor's characteristics.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 15 A |
| Package | JEDEC 2-10R1C |
| Cies (input capacitance) | 2300 pF |
| Integrated diode | Da (FRD između emitera i kolektora) |
