Igbt IRG4PC50S
New IGBTA 2nd-generation Infineon IGBT, made using TRENCHSTOP(TM) technology, with a built-in soft, fast-recovery antiparallel EmCon (Emitter Controlled) HE diode. Short-circuit withstand time is 10uS. As a high-voltage IGBT, it is suitable for parallel connection, giving it the ability to be used in a very wide range of different applications (frequency converters, UPS, welding machines, etc.).
| Vces (collector-emitter voltage) | 1200 V |
| Ic (collector current) at 25°C | 25 A |
| Package | PG-TO-247-3 |
| Cies (input capacitance) | 1860 pF |
| Integrated diode | Emitter Controlled HE dioda sa brzom oporavkom |
