Igbt SGP07N120
New IGBTAn ultra-fast IGBT made in NPT technology, whose advantages are: the ability to connect in parallel, a moderate increase in Eoff with temperature (up to 30% lower than the previous generation), and a very wide parameter distribution. Its primary purpose is in the construction of SMPS devices, all inverter devices, as well as in motor control.
| Vces (collector-emitter voltage) | 1200 V |
| Ic (collector current) at 25°C | 8 A |
| Package | PG-TO-220-3-1 |
| Cies (input capacitance) | 720 pF |
| Integrated diode | Da |
