Igbt SGP15N120
New IGBTAn ultra-fast IGBT made using NPT technology, whose advantages are: the ability to be connected in parallel, a moderate increase in Eoff with temperature (as much as 40% lower than the previous generation), and a very wide parameter distribution. Its primary purpose is in the construction of SMPS devices, all inverter devices, as well as motor control.
| Vces (collector-emitter voltage) | 1200 V |
| Ic (collector current) at 25°C | 15 A |
| Package | PG-TO-220-3-1 / PG-TO-247-3 |
| Cies (input capacitance) | 1250 pF |
