NGB8204N

Igbt NGB8204N

New IGBT

Description

A "high-speed" N-channel IGBT with integrated gate-emitter ESD protection, as well as overvoltage protection, all intended for use with inductive loads (relay coils and similar).

Technical specifications

Vces (collector-emitter voltage)	430 V
Ic (collector current) at 25°C	18 A
Package	D2PAK
Cies (input capacitance)	800 pF
Integrated diode	Da