Igbt SGB15N60HS
New IGBTAn ultra-fast IGBT made using NPT technology, whose advantages are: the ability to be connected in parallel, a moderate increase in Eoff with temperature (as much as 30% lower than the previous generation), and a very wide parameter distribution.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 15 A |
| Package | PG-TO-263-3-2 (D²-PAK) |
| Cies (input capacitance) | 810 pF |
| Integrated diode | Da |
