Igbt GT60N321
New IGBTThe GT60N321 is an extremely powerful 4th-generation N-channel IGBT, intended for use in all high-power switching applications. You will find this popular Toshiba transistor choice in many inverter devices such as three-phase welding machines, AC/DC and DC/DC converters, and it is suitable for many professional and hobby electronics projects. Maximum switching speed is 0.25uS, and connected in parallel it can replace much more powerful modules.
| Vces (collector-emitter voltage) | 1000 V |
| Ic (collector current) at 25°C | 60 A |
| Package | JEDEC 2-21F2C |
| Cies (input capacitance) | 4000 pF |
| Integrated diode | Da |
