Igbt IXEN60N120
New IGBTThis IXYS IGBT in a mini-block package has many advantages, such as: a low saturation voltage, a positive temperature coefficient (an advantage in parallel connection), fast switching, a low leakage current, etc. (an IGBT with this designation requires an external freewheeling diode). Its wide range of applications shows this transistor's advantages, among which we highlight: induction heating, power supplies, UPS units, H-bridges, three-phase bridges, simple switching applications, and many others.
| Vces (collector-emitter voltage) | 1200 V |
| Ic (collector current) at 25°C | 100 A |
| Package | miniBLOC, SOT-227 B |
| Cies (input capacitance) | 3.8 pF |
| Integrated diode | HiPerFREDTM dioda, VF=2.3-2.7V (60A, 25°C) |
