Mosfet IRF1010N
New MOSFETAn IR (International Rectifier) MOSFET with fast switching characteristics, using advanced HEXFET technology. Suitable for use in all industrial applications requiring a power dissipation of less than 50W.
| Channel type (N/P) | N-kanalni |
| Drain-Source Voltage (Vds) | 55 V |
| Continuous Drain Current @ 25°C (Id) | 85 A |
| Package | TO-220AB |
