Mosfet IRF5210
New MOSFETAn IR (International Rectifier) MOSFET with fast switching characteristics, using advanced HEXFET technology. Suitable for general use in all highly efficient and demanding fast switching circuits, and the transistor itself is intended for devices that require space savings.
| Channel type (N/P) | P-kanalni |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current @ 25°C (Id) | 40 A |
| Package | D2Pak / TO-262 |
