Mosfet IRF5210s
New MOSFETAn IR (International Rectifier) P-channel MOSFET with fast switching characteristics, using advanced HEXFET technology. Suitable for general use in all highly efficient and demanding fast-switching circuits; mounted directly on a PCB, the transistor allows a heat dissipation of up to 2W without additional cooling.
| Channel type (N/P) | P-kanalni |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current @ 25°C (Id) | 40 A |
| Package | D2Pak / TO-262 |
