Mosfet IRF5305s
New MOSFETAn IR (International Rectifier) P-channel MOSFET with fast switching characteristics, using advanced HEXFET technology. Suitable for general use in all highly efficient and demanding fast-switching circuits, with a heat dissipation of up to 2W when the transistor is mounted directly on a PCB without additional cooling.
| Channel type (N/P) | P-kanalni |
| Drain-Source Voltage (Vds) | 55 V |
| Continuous Drain Current @ 25°C (Id) | 31 A |
| Package | D2Pak / TO-262 |
