Mosfet IRF640N
New MOSFETAn IR (International Rectifier) 5th-generation MOSFET with fast switching characteristics, using advanced HEXFET technology. Suitable for general use in all highly efficient and demanding fast-switching circuits; the transistor itself is intended for devices requiring space savings. Suitable for parallel use.
| Channel type (N/P) | N-kanalni |
| Drain-Source Voltage (Vds) | 200 V |
| Continuous Drain Current @ 25°C (Id) | 18 A |
| Package | TO-220AB, D2Pak (IRF640NS), TO-262 (IRF640NL) |
