Mosfet IRFP064
New MOSFETA 3rd-generation VISHAY N-channel power MOSFET transistor, distinguished by a high switching speed, shock resistance, low "ON"-state resistance, and price. Intended for all industrial applications. Maximum power dissipation = 300W. Suitable for parallel connection.
| Channel type (N/P) | N-kanalni |
| Drain-Source Voltage (Vds) | 60 V |
| Continuous Drain Current @ 25°C (Id) | 70 A |
| Package | TO-247AC |
