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Inverter Elektronika

IRFP150N

Mosfet IRFP150N

New MOSFET
190.46 RSD

Description

An IR (International Rectifier) N-channel 5th-generation MOSFET with fast switching characteristics, using advanced HEXFET technology. Its main purpose is use in various highly efficient, high-power switching applications.

Technical specifications

Channel type (N/P) N-kanalni
Drain-Source Voltage (Vds) 100 V
Continuous Drain Current @ 25°C (Id) 42 A
Package TO-247AC
Download datasheet