Mosfet IRFP350
New MOSFETA third-generation VISHAY N-channel power MOSFET transistor, distinguished by high switching speed, shock resistance, low ON-state resistance, and price. It is intended for all industrial applications. Maximum power dissipation = 190W. Suitable for parallel connection.
| Channel type (N/P) | N-kanalni |
| Drain-Source Voltage (Vds) | 400 V |
| Continuous Drain Current @ 25°C (Id) | 16 A |
| Package | TO-247AC |
