← Back

Inverter Elektronika

IRFK2D250

Mosfet IRFK2D250

New MOSFET
4,925.21 RSD

Description

An IR (International Rectifier) N-channel MOSFET with fast switching characteristics, using advanced HEXFET technology. The package is designed to use as little space as possible. The base cooling plate is electrically isolated, and the cable connection screws are M5. A truly powerful MOSFET suitable for high currents. Its primary purpose is general use in all fast-switching applications, as well as applications sensitive to oscillations.

Technical specifications

Drain-Source Voltage (Vds) 200 V
Continuous Drain Current @ 25°C (Id) 54 A
Package HEX-PAK TO-240
Download datasheet