MG50G2DM1

Mosfet MG50G2DM1

New MOSFET

Description

A Toshiba MOSFET for high-power switching applications, as well as motor control. The drain is isolated from the package, making it more flexible in terms of heatsink mounting.

Technical specifications

Drain-Source Voltage (Vds)	450 V
Continuous Drain Current @ 25°C (Id)	50 A
Package	HEX-PAK TO-240