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Inverter Elektronika

HGTG30N60A4D

Item code: YWab4

Igbt HGTG30N60A4D

New IGBT
523.23 RSD

Description

This N-channel SMPS IGBT combines the best advantages of a MOSFET's high input resistance with the low on-state conduction loss of bipolar transistors. It is ideal for many high-voltage switching applications at high frequencies, where reduced conduction losses are crucial. Also, as a spare electronic component, it can be used when servicing inverter devices, for professional and hobby electronics projects. Note: This transistor comes with an integrated diode!

Technical specifications

Vces (collector-emitter voltage) 600 V
Ic (collector current) at 25°C 75 A
Package TO-247
Integrated diode Hyperfast dioda (TA49373)
Download datasheet