Igbt SGW50N60HS G50N60HS
New IGBTAn ultra-fast IGBT made using NPT technology, whose advantages are: the ability to be connected in parallel, a moderate increase in Eoff with temperature (as much as 30% lower than the previous generation), and a very wide parameter distribution. Designed for applications operating above 30kHz. Package - TO-247. Continuous current - 100A / 150A (pulsed) / 25 degrees C. C/E voltage - 600V
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 50 A |
| Package | PG-TO-247-3 |
| Cies (input capacitance) | 2572 pF |
| Integrated diode | IDP45E60 |
