IRFPG30

Mosfet IRFPG30

New MOSFET

Description

An IR (International Rectifier) 3rd-generation MOSFET with fast switching characteristics, using advanced HEXFET technology. Its main purpose is use in various highly efficient, high-power switching applications.

Technical specifications

Channel type (N/P)	N-kanalni
Drain-Source Voltage (Vds)	1000 V
Continuous Drain Current @ 25°C (Id)	3.1 A
Package	TO-247AC