Igbt IGW50N65F5
New IGBTAn ultra-fast IGBT made in Trenchstop technology, declared best-in-class, whose advantages are: the ability to connect in parallel, and a very wide parameter distribution. It is designed for inverter devices ranging from medium to high-oscillation circuits.
| Vces (collector-emitter voltage) | 650 V |
| Ic (collector current) at 25°C | 50 A |
| Package | PG-TO247-3 |
| Cies (input capacitance) | 3000 pF |
| Integrated diode | Da |
