NGTB50N65S1

Igbt NGTB50N65S1

New IGBT

Description

An ON Semiconductor IGBT, made using FS Trench construction. Primarily intended for inverter welding machines, as well as other commercial use.

Technical specifications

Vces (collector-emitter voltage)	650 V
Ic (collector current) at 25°C	140 A
Package	TO-247
Cies (input capacitance)	3080 pF
Integrated diode	Da, sa brzom povratnom oporavkom