Igbt HGTG30N60C3D
New IGBTThis SMPS IGBT with a built-in antiparallel hyper-fast diode combines the best advantages of a MOSFET's high input resistance with the low on-state conduction loss of bipolar transistors. It is ideal for many high-voltage switching applications at high frequencies, where reduced conduction losses are crucial. Also, as a spare electronic component, it can be used when servicing inverter devices, for professional and hobby electronics projects. The antiparallel diode is integrated into the package.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 63 A |
| Package | TO-247 |
| Integrated diode | Hiperbrza anti-paralelna dioda |
