Igbt IXDP35N60B
New IGBTAn ultra-fast IGBT made using NPT technology, whose advantages are: the ability to be connected in parallel thanks to a positive temperature coefficient, a moderate increase in Eoff with temperature (as much as 30% lower than the previous generation), and a very wide parameter distribution. Its primary purpose is in the construction of DC choppers, SMPS devices, all inverter devices, as well as motor control.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 60 A |
| Package | TO-220 AB |
| Cies (input capacitance) | 1600 pF |
| Integrated diode | Ultra brza dioda (FRED) opciono |
