IKW30N60H3
New IGBTAn Infineon IGBT from the series of transistors for resonant switching applications, made using TRENCHSTOP and FieldStop technology, has a very wide parameter distribution as well as temperature stability while maintaining mechanical strength. As a high-voltage IGBT, it is suitable for parallel connection, giving it the ability to be used in a very wide range of different inverter applications. Technicians will recognize it in the Varstroj welding machine.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 60 A |
| Package | TO-247 |
| Cies (input capacitance) | 1630 pF |
| Integrated diode | Da |
