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Inverter Elektronika

HGTG30N60B3

Item code: YWab40

Igbt HGTG30N60B3

New IGBT
758.63 RSD

Description

This SMPS IGBT combines the best advantages of a MOSFET's high input resistance with the low on-state conduction loss of bipolar transistors. It is ideal for many high-voltage switching applications at high frequencies, where reduced conduction losses are crucial. It can also be used as a spare electronic component when servicing inverter devices, for professional and hobby electronics projects.

Technical specifications

Vces (collector-emitter voltage) 600 V
Ic (collector current) at 25°C 60 A
Package TO-247
Download datasheet