Igbt IKW30T60 IKW30N60T
New IGBTAn Infineon second-generation IGBT, made in TRENCHSTOP(TM) technology, with a built-in soft, fast-recovery antiparallel EmCon HE diode. Short-circuit withstand time is 5uS. As a high-voltage IGBT, it is suitable for parallel connection, giving it the ability to be used in a very wide range of different applications (frequency converters, UPS, welding machines, etc.).
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 30 A |
| Package | PG-TO-247-3-21 |
| Cies (input capacitance) | 1630 pF |
| Integrated diode | Soft, fast recovery anti-parallel EmCon HE dioda sa VF=1.65V na 25°C |
