Igbt SGW30N60
New IGBTAn ultra-fast IGBT made using NPT technology, whose advantages are: the ability to be connected in parallel, a moderate increase in Eoff with temperature (as much as 75% lower than the previous generation), and a very wide parameter distribution. Designed for motor control and inverter devices.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 30 A |
| Package | PG-TO-247-3 |
| Cies (input capacitance) | 1600 pF |
