Igbt GT30J121
New IGBTThe GT30J101 is a 3rd-generation N-channel IGBT intended for use in all high-power switching applications. You will find this popular Toshiba transistor choice in many inverter devices such as: welding machines, AC/DC and DC/DC converters, and it is suitable for many professional and hobby electronics projects.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 30 A |
| Package | JEDEC 2-16C1C |
| Cies (input capacitance) | 2200 pF |
