Igbt GT40QR21
New IGBTThe GT40QR21 is a 6th-generation RC-IGBT with a protection diode; this Toshiba transistor's primary purpose is in voltage-resonant inverter switching applications.
| Vces (collector-emitter voltage) | 1200 V |
| Ic (collector current) at 25°C | 40 A |
| Package | TO-3P(N) |
| Cies (input capacitance) | 1500 pF |
| Integrated diode | Da |
