Igbt GT40WR21
New IGBTThe GT40WR21 is another in the line of new Toshiba transistors. This 6th-generation IGBT is intended for voltage-resonant inverter applications, for high-voltage circuit switching, with a built-in protection diode. Its outstanding characteristics place it at the very top among IGBT transistors intended for this purpose. The protection diode integrated into the package has Trr = 1uS!
| Vces (collector-emitter voltage) | 1800 V |
| Ic (collector current) at 25°C | 40 A |
| Package | TO-3P(N) |
| Cies (input capacitance) | 4500 pF |
| Integrated diode | Da |
