Igbt GT60PR21
New IGBTThe GT60PR21 is also a 6th-generation IGBT intended for voltage-resonant inverter applications, for high-voltage circuit switching, with a built-in protection diode. Its outstanding characteristics place it at the very top among IGBT transistors intended for this purpose.
| Vces (collector-emitter voltage) | 1100 V |
| Ic (collector current) at 25°C | 60 A |
| Package | TO-3P(N) |
| Cies (input capacitance) | 2350 pF |
| Integrated diode | Da, sa freewheeling diodom monolitski integrisanom u IGBT čipu |
