Igbt NGB8206N
New IGBTA "high-speed" N-channel IGBT with integrated gate-emitter ESD protection, as well as overvoltage protection, all intended for use with inductive loads (relay coils and similar), as well as any application requiring switching at high voltage and high current.
| Vces (collector-emitter voltage) | 390 V |
| Ic (collector current) at 25°C | 20 A |
| Package | D2PAK |
| Integrated diode | Da |
