RJP30H1

Igbt RJP30H1

New IGBT

Description

A silicon N-channel IGBT with a high switching speed, low saturation voltage, low leakage current, etc.

Technical specifications

Vces (collector-emitter voltage)	360 V
Ic (collector current) at 25°C	40 A
Package	TO-252 (PRSS0004ZJ-A)
Cies (input capacitance)	8 pF