Igbt IHW20R1202
New IGBTAn Infineon IGBT from the series of transistors for resonant switching applications, made using TRENCHSTOP(TM) technology, has a very wide parameter distribution as well as temperature stability while maintaining mechanical strength. As a high-voltage IGBT, it is suitable for parallel connection, giving it the ability to be used in a very wide range of different applications (induction cooking, inverter microwave ovens, resonant converters, soft-switching applications, etc.).
| Vces (collector-emitter voltage) | 1200 V |
| Ic (collector current) at 25°C | 20 A |
| Package | PG-TO247-3 |
| Cies (input capacitance) | 1503 pF |
| Integrated diode | Da, sa niskom forward naponom |
