Mosfet IRF530N
New MOSFETAn IR (International Rectifier) P-channel MOSFET with fast switching characteristics, using advanced HEXFET technology. Suitable for general use in all highly efficient and demanding fast-switching circuits; the transistor itself is intended for devices allowing a heat dissipation of up to 50W.
| Channel type (N/P) | N-kanalni |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current @ 25°C (Id) | 17 A |
| Package | TO-220AB |
