Igbt HGTG30N60B3D
New IGBTThis SMPS IGBT combines the best advantages of a MOSFET's high input resistance with the low on-state conduction loss of bipolar transistors. It is ideal for many high-voltage switching applications at high frequencies, where reduced conduction losses are crucial. It can also be used as a spare electronic component when servicing inverter devices, for professional and hobby electronics projects.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 60 A |
| Package | TO-247 |
| Integrated diode | Anti-paralelna hyperfast dioda, VEC 1.95 V (tipično) |
