Igbt MP6750
New IGBTA Toshiba three-phase IGBT module with 6 integrated IGBT transistors, each with its own protection diode. It is primarily designed for motor control as well as for higher-power switching applications. It is distinguished by a low saturation voltage of only 4V and a fast response speed.
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 15 A |
| Package | 2-78A1A |
| Cies (input capacitance) | 1000 pF |
