Igbt NGTG50N60FLW
New IGBTAn ON Semiconductor IGBT, made using TRENCH technology, without a diode. Short-circuit withstand time is 5uS. As a high-voltage IGBT, it is suitable for parallel connection, giving it the ability to be used in a very wide range of different applications (frequency converters, PFC, solar converters, UPS, welding machines, etc.).
| Vces (collector-emitter voltage) | 600 V |
| Ic (collector current) at 25°C | 100 A |
| Package | TO-247 (CASE 340L STYLE 4) |
| Cies (input capacitance) | 7302 pF |
| Integrated diode | Da (NGTB50N60FLWG) |
